12.2 Sample displacement parameters

After a good fit is obtained for the unit cell constants, noted by the tick marks now well aligned to the reflection positions, this should be optimized by refinement of an appropriate sample parameter, but do not do this until the reflection positions are well fit.

Note that with older software, one would vary the \(2\theta \) or TOF zero correction. This correction is available in GSAS-II but does not properly apply the correct shift for a misplaced sample and should not normally be used.

There is a special sample displacement parameter, which is found as an HAP parameter (see §14.7), rather than in the sample or instrumental data tree entries. This is called the “Layer displacement parameter,” which is a value in \(\mu \)m. This would be used in a material where the sample components are not mixed homogeneously, and thus the phases are not all at the same location with respect to the sample surface. This means that the sample displacement is dependent on the histogram and on the phase. An example of this would be a layered sample, where each phase will have a slightly different sample displacement.